2003. 2. 25 1/3 semiconductor technical data bc846/7/8 epitaxial planar npn transistor revision no : 2 general purpose application. switching application . features high voltage : bc846 v ceo =65v. for complementary with pnp type bc856/857/858. maximum rating (ta=25 ) dim millimeters 1. emitter 2. base 3. collector sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ type bc846a bc846b bc847a bc847b bc847c BC848a BC848b BC848c mark 1a 1b 1e 1f 1g 1j 1k 1l characteristic symbol rating unit collector-base voltage bc846 v cbo 80 v bc847 50 BC848 30 collector-emitter voltage bc846 v ceo 65 v bc847 45 BC848 30 emitter-base voltage bc846 v ebo 6 v bc847 6 BC848 5 collector current i c 100 ma emitter current i e -100 ma collector power dissipation p c * 350 mw junction temperature t j 150 storage temperature range t stg -55 150 mark spec type name marking lot no. p c * : package mounted on 99.5% alumina 10 8 0.6mm.
2003. 2. 25 2/3 bc846/7/8 revision no : 2 electrical characteristics (ta=25 ) note : according to the value of h fe the bc846, bc847, BC848 are classified as follows. characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =30v, i e =0 - - 15 na dc current gain (note) bc846 h fe v ce =5v, i c =2ma 110 - 450 bc847 110 - 800 BC848 110 - 800 collector-emitter saturation voltage v ce(sat) 1 i c =10ma, i b =0.5ma - 0.09 0.25 v v ce(sat) 2 i c =100ma, i b =5ma - 0.2 0.6 base-emitter saturation voltage v be(sat) 1 i c =10ma, i b =0.5ma - 0.7 - v v be(sat) 2 i c =100ma, i b =5ma - 0.9 - base-emitter voltage v be(on1) v ce =5v, i c =2ma 0.58 - 0.7 v v be(on2) v ce =5v, i c =10ma - - 0.75 v transition frequency f t v ce =5v, i c =10ma, f=100mhz - 300 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 2.5 4.5 pf noise figure nf v ce =6v, i c =0.1ma r g =10k , f=1khz - 1.0 10 db classification a b c h fe bc846 110 220 200 450 - bc847 110 220 200 450 420 800 BC848 110 220 200 450 420 800
2003. 2. 25 3/3 bc846/7/8 revision no : 2 c collector current i (ma) 0 collector current i (ma) c 0.1 0.2 base-emitter voltage v (v) be 0 collector-emitter voltage v (v) ce ce c i - v i - v collector-base voltage v (v) capacitance c (pf) ob 10 1 13 20 cb 10 30 c - v collector current i (ma) dc current gain h 13 fe 10 30 c h - i 4 8 12 16 20 20 40 60 80 100 i =400 a b i =350 a b i =50 a b i =100 a b i =150 a b i =200 a b i =250 a b i =300 a b cbe 0.4 0.6 0.8 1.0 0.3 0.5 1 3 5 10 30 50 100 v =5v ce fe c 100 300 1k 10 30 50 100 300 500 1k saturation voltage 10 collector current i (ma) 1 10 30 100 3300 30 100 c 1 k be(sat) 300 1k v , v - i be(sat) c ce(sat) v , v (v) ce(sat) 3k 10k i /i =20 c b v be(sat) v ce(sat) ob cb 100 3 5 f=1mhz i =0 e v =5v ce
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